TPC8111 2002-03-25 1 toshiba field effect transistor silicon p channel mos type (u-mos iv) TPC8111 lithium ion battery applications notebook pc applications portable equipment applications ? small footprint due to small and thin package ? low drain-source on resistance: r ds (on) = 8.1 m ? (typ.) ? high forward transfer admittance: |y fs | = 23 s (typ.) ? low leakage current: i dss = ? 10 a (max) (v ds = ? 30 v) ? enhancement-mode: v th = ? 0.8 to ? 2.0 v (v ds = ? 10 v, i d = ? 1 ma) maximum ratings (ta = 25c) characteristics symbol rating unit drain-source voltage v dss ? 30 v drain-gate voltage (r gs = 20 k ? ) v dgr ? 30 v gate-source voltage v gss 20 v dc (note 1) i d ? 11 drain current pulse (note 1) i dp ? 44 a drain power dissipation (t = 10 s) (note 2a) p d 1.9 w drain power dissipation (t = 10 s) (note 2b) p d 1.0 w single pulse avalanche energy (note 3) e as 31.5 mj avalanche current i ar ? 11 a repetitive avalanche energy (note 2a) (note 4) e ar 0.19 mj channel temperature t ch 150 c storage temperature range t stg ? 55 to 150 c note: for (note 1), (note 2), (note 3) and (note 4), please refer to the next page. this transistor is an electrostatic sensitive device. please handle with caution. unit: mm jedec D jeita D toshiba 2-6j1b weight: 0.080 g (typ.) circuit configuration 8 6 1 2 3 7 5 4
TPC8111 2002-03-25 2 thermal characteristics characteristics symbol max unit thermal resistance, channel to ambient (t = 10 s) (note 2a) r th (ch-a) 65.8 c/w thermal resistance, channel to ambient (t = 10 s) (note 2b) r th (ch-a) 125 c/w marking (note 5) note 1: please use devices on condition that the channel temperature is below 150c. note 2: (a) device mounted on a glass-epoxy board (a) (b) device mounted on a glass-epoxy board (b) note 3: v dd = ? 24 v, t ch = 25c (initial), l = 0.2 mh, r g = 25 ? , i ar = ? 11 a note 4: repetitive rating: pulse width limited by maximum channel temperature note 5: ? on lower left of the marking indicates pin 1. shows lot number. (year of manufacture: last decimal digit of the year of manufacture, month of manufacture: january to december are denoted by letters a to l respectively.) (b) fr-4 25.4 25.4 0.8 (unit: mm) (a) fr-4 25.4 25.4 0.8 (unit: mm) type TPC8111
TPC8111 2002-03-25 3 electrical characteristics (ta = = = = 25c) characteristics symbol test condition min typ. max unit gate leakage current i gss v gs = 16 v, v ds = 0 v ? ? 10 a drain cut-off current i dss v ds = ? 30 v, v gs = 0 v ? ? ? 10 a v (br) dss i d = ? 10 ma, v gs = 0 v ? 30 ? ? drain-source breakdown voltage v (br) dsx i d = ? 10 ma, v gs = 20 v ? 15 ? ? v gate threshold voltage v th v ds = ? 10 v, i d = ? 1 ma ? 0.8 ? ? 2.0 v v gs = ? 4 v, i d = ? 5.5 a ? 12 18 drain-source on resistance r ds (on) v gs = ? 10 v, i d = ? 5.5 a ? 8.1 12 m ? forward transfer admittance |y fs | v ds = ? 10 v, i d = ? 5.5 a 11 23 ? s input capacitance c iss ? 5710 ? reverse transfer capacitance c rss ? 560 ? output capacitance c oss v ds = ? 10 v, v gs = 0 v, f = 1 mhz ? 590 ? pf rise time t r ? 18 ? turn-on time t on ? 23 ? fall time t f ? 109 ? switching time turn-off time t off duty < = 1%, t w = 10 s ? 396 ? ns total gate charge (gate-source plus gate-drain) q g ? 107 ? gate-source charge 1 q gs1 ? 12 ? gate-drain (?miller?) charge q gd v dd ? ? 24 v, v gs = 10 v, i d = ? 11 a ? 20 ? nc source-drain ratings and characteristics (ta = = = = 25c) characteristics symbol test condition min typ. max unit drain reverse current pulse (note 1) i drp ? ? ? ? 44 a forward voltage (diode) v dsf i dr = ? 11 a, v gs = 0 v ? ? 1.2 v r l = 2.7 ? v dd ? ? 15 v 0 v v gs ? 10 v 4.7 ? i d = ? 5.5 a v out
TPC8111 2002-03-25 4 forward transfer admittance |y fs | (s) drain-source voltage v ds (v) drain-source voltage v ds (v) i d ? v ds drain current i d (a) drain-source voltage v ds (v) i d ? v ds drain current i d (a) gate-source voltage v gs (v) i d ? v gs drain current i d (a) gate-source voltage v gs (v) v ds ? v gs drain current i d (a) |y fs | ? i d drain current i d (a) drain-source on resistance r ds (on) (m ? ) r ds (on) ? i d ? 2 ? 3 ? 4 ? 5 common source v ds = ? 10 v pulse test 0 ? 20 ? 30 ? 40 ? 10 0 ? 1 100 ta = ? 55c 25 0 ? 2 0 ? 4 ? 6 ? 8 ? 10 ? 2 ? 4 ? 6 ? 8 ? 10 common source ta = 25c pulse test v gs = ? 2 v ? 2.2 ? 3 ? 10 ? 5 ? 4 ? 2.1 ? 2.3 ? 2.4 ? 2.5 ? 8 ? 12 ? 16 ? 20 common source ta = 25c pulse test ? 2.2 v gs = ? 2.1 v 0 ? 8 ? 12 ? 16 ? 20 ? 4 0 ? 4 ? 3 ? 5 ? 4 ? 10 ? 2.3 ? 2.4 ? 2.5 ? 2.7 ? 2.6 ? 8 ? 12 ? 16 ? 20 common source ta = 25c pulse test 0 ? 0.2 ? 0.3 ? 0.4 ? 0.5 ? 0.1 0 ? 4 i d = ? 11 a ? 2.5 ? 5.5 0.3 1 10 100 0.5 3 5 30 50 ? 0.1 ? 1 ? 10 ? 50 common source v ds = ? 10 v pulse test ta = ? 55c 100 25 ? 30 ? 3 ? 5 ? 0 . 3 ? 0 . 5 0.3 1 10 100 0.5 3 5 30 50 ? 0.1 ? 1 ? 10 ? 50 common source ta = 25c pulse test ? 30 ? 3 ? 5 ? 0 . 3 ? 0 . 5 ? 10 v gs = ? 4.5 v
TPC8111 2002-03-25 5 ambient temperature ta (c) r ds (on) ? ta drain-source on resistance r ds (on) (m ? ) drain-source voltage v ds (v) i dr ? v ds drain reverse current i dr (a) drain-source voltage v ds (v) capacitance ? v ds capacitance c (pf) ambient temperature ta (c) v th ? ta gate threshold voltage v th (v) ambient temperature ta (c) p d ? ta drain power dissipation p d (w) gate-source voltage v gs (v) total gate charge q g (nc) dynamic input/output characteristics drain-source voltage v ds (v) 0 ? 0.1 ? 1 ? 10 ? 100 0.2 0.4 0.6 0.8 1 ? 10 common source ta = 25c pulse test ? 5 ? 3 ? 1 v gs = 0 v ? 1.5 0 ? 80 ? 40 0 40 120 160 80 ? 0.5 ? 1 ? 2 ? 2.5 common source v ds = ? 10 v i d = ? 1 ma pulse test 100 150 175 0 0.8 1.2 1.6 2.0 0.4 0 50 (1) device mounted on a glass-epoxy board (a) (note 2a) (2) device mounted on a glass-epoxy board (b) (note 2b) t = 10 s (1) (2) 25 75 125 15 0 ? 80 ? 40 0 40 120 160 80 5 10 20 25 v gs = ? 4.5 v common source pulse test ? 10 i d = ? 11 a, ? 5.5 a, ? 2.5 a i d = ? 11 a, ? 5.5 a, ? 2.5 a 100 ? 0.1 ? 1 ? 10 1000 10000 c oss c iss common source v gs = 0 v f = 1 mhz ta = 25c c rss 30000 50000 3000 5000 300 500 ? 100 ? 0.3 ? 3 ? 30 ? 12 ? 8 0 ? 4 ? 10 ? 6 ? 2 0 ? 10 ? 20 ? 30 0 20 40 60 80 common source i d = ? 11 a ta = 25c pulse test v dd = ? 24 v v ds v gs ? 6 ? 12 140 v dd = ? 24 v ? 12 ? 6 ? 5 ? 15 ? 25 100 120
TPC8111 2002-03-25 6 r th ? t w safe operating area pulse width t w (s) drain-source voltage v ds (v) normalized transient thermal impedance r th (c/w) drain current i d (a) 0.1 0.001 0.01 0.1 1 10 100 1000 1 10 100 1000 single pulse (2) (1) device mounted on a glass-epoxy board (a) (note 2a) (2) device mounted on a glass-epoxy board (b) (note 2b) t = 10 s (1) 0.01 1 0.1 10 100 0.01 0.1 1 10 100 *: single pulse ta = 25c curves must be derated linearly with increase in temperature. i d max (pulse) * 10 ms * 1 ms * v dss max
TPC8111 2002-03-25 7 ? toshiba is continually working to improve the quality and reliability of its products. nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. it is the responsibility of the buyer, when utilizing toshiba products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such toshiba products could cause loss of human life, bodily injury or damage to property. in developing your designs, please ensure that toshiba products are used within specified operating ranges as set forth in the most recent toshiba products specifications. also, please keep in mind the precautions and conditions set forth in the ?handling guide for semiconductor devices,? or ?toshiba semiconductor reliability handbook? etc.. ? the toshiba products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). these toshiba products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (?unintended usage?). unintended usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. unintended usage of toshiba products listed in this document shall be made at the customer?s own risk. ? the information contained herein is presented only as a guide for the applications of our products. no responsibility is assumed by toshiba corporation for any infringements of intellectual property or other rights of the third parties which may result from its use. no license is granted by implication or otherwise under any intellectual property or other rights of toshiba corporation or others. ? the information contained herein is subject to change without notice. 000707ea a restrictions on product use
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